Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures

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Author(s)
” G.-H. Lee, Y.-J. Yu, X. Cui, N. Petrone, C.H. Lee, M.S. Choi, D.-Y. Lee, C. Lee, W.J. Yoo, K. Watanabe, T. Taniguchi, C. Nuckolls, P. Kim, and J. Hone
Publication
ACS Nano
Year Published
2013
Details

2013, 7 7931-7936. DOI: 10.1021/nn402954e